发明名称 |
Cyclic thermal anneal for dislocation reduction |
摘要 |
The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.
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申请公布号 |
US6635110(B1) |
申请公布日期 |
2003.10.21 |
申请号 |
US20000603572 |
申请日期 |
2000.06.23 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
LUAN HSIN-CHIAO;KIMERLING LIONEL C. |
分类号 |
C30B33/00;H01L21/20;H01L21/28;H01L21/316;H01L21/324;(IPC1-7):C30B1/00;C50B29/08 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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