| 摘要 |
A method of producing an exposure mask by carrying out at least two times of exposure on a mask substrate, wherein at a first time of pattern exposure, alignment marks to be reference for positioning at a second time of exposure are exposed onto a position on the mask substrate with positional error by substrate deformation obtained in advance with an exposure apparatus to be used corrected, and at a second time of pattern exposure, positional error by substrate deformation obtained in advance with the exposure apparatus to be used is corrected and thereby the position of the alignment marks are detected, and on the basis of the detected position of the alignment marks, the positions between exposure patterns are aligned.
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