| 摘要 |
PURPOSE:To contrive the reduction of a layer resistance of a diffused region and the enhancement of the density thereof in the semiconductor device by wiring Pt and Au on a diffused region. CONSTITUTION:A polysilicon 4 is superposed on a field oxide film 2 and a gate oxide film 3 of a P-type Si substrate 1. A resist mask 5 is coated thereon to etch and to retain the polysilicon 4 in narrower width than the width of the mask. Then, the film 3 is etched, and Pt layer 6 and Au layer 7 are laminated thereon. The mask 5 is removed, and the surface of the gate layer 4 is oxidized to form an oxide layer 8. Thereafter, P ion is implanted thereto to form an N-type layer 9, and Si3N4 mask 10 is coated theron, and the Pt layer and the Au layer are etched. Subsequently, an SiO2 film 11 is coated thereon, openings are selectively perforated thereat, aluminum electrodes 12 are wired thereon. This configuration can form partly the Pt film into platinum silicide to form an ohmic contact to prevent the Au from diffusing into the Si. The Au prevent oxidation. The SiO2 film 8 for enclosing the gate layer becomes a stopper of etching when perforating the openings at the Si3N4 10 so that the gate layer may not be short-circuited. Accordingly, the layer resistance is reduced to accelerate the operation and to increase the density. |
