发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.
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申请公布号 |
US6636541(B1) |
申请公布日期 |
2003.10.21 |
申请号 |
US20000516835 |
申请日期 |
2000.03.02 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKAYAMA HISASHI;KITO MASAHIRO;ISHINO MASATO;MATSUI YASUSHI |
分类号 |
H01S5/00;H01S5/34;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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