Method of manufacturing a semiconductor device

摘要

When sidewalls (10) are formed by anisotropic etching, an insulating film (9) serves as a protective film for a major surface of a semiconductor substrate (100) and therefore prevents the major surface from suffering etching damage. That relieves an electric field concentration in a pn junction, to effectively take advantage of an LDD structure. Since a portion of the insulating film (9) extending off the sidewalls (10) is removed, there is no need for etching of the insulating film (9) when the contact holes (12) are formed and only an insulating film (11) is etched. That prevents a short circuit between main electrodes (13) and a gate electrode (7) and makes it possible to determine the spacing between the contact holes (12) narrower than the width of the gate electrode (7).