发明名称 |
Strained fin FETs structure and method |
摘要 |
A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.
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申请公布号 |
US6635909(B2) |
申请公布日期 |
2003.10.21 |
申请号 |
US20020101807 |
申请日期 |
2002.03.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLARK WILLIAM F.;FRIED DAVID M.;LANZEROTTI LOUIS D.;NOWAK EDWARD J. |
分类号 |
H01L21/336;H01L29/10;H01L29/786;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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