Method and manufacturing MRAM offset cells in a damascene structure

摘要

A method of manufacturing an offset MRAM device (110), including utilizing two resist layers either to pattern a magnetic stack layer to form offset conductive lines (158) and magnetic memory cells (160), or to pattern an insulating layer to form vias (168) to expose magnetic memory cells and trenches (170) for conductive lines, or both, using a single etch process.