发明名称 |
Semiconductor device |
摘要 |
A semiconductor device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; a first semiconductor layer provided on said insulating layer; a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate; and second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate, wherein areal sizes of said plurality of openings are substantially equal to each other.
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申请公布号 |
US6635952(B2) |
申请公布日期 |
2003.10.21 |
申请号 |
US20020106371 |
申请日期 |
2002.03.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INOH KAZUMI;KAWANAKA SHIGERU;MINAMI YOSHIHIRO;KATSUMATA YASUHIRO |
分类号 |
H01L21/76;H01L21/02;H01L21/336;H01L21/762;H01L21/822;H01L21/8242;H01L21/8244;H01L23/544;H01L27/04;H01L27/10;H01L27/108;H01L27/11;H01L29/786;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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