发明名称 Semiconductor device
摘要 A semiconductor device comprises: a semiconductor substrate; an insulating layer provided on said semiconductor substrate; a first semiconductor layer provided on said insulating layer; a plurality of openings penetrating said first semiconductor layer and said insulating layer and reaching said semiconductor substrate; and second semiconductor layers filling said openings by selective growth and connected to said semiconductor substrate, wherein areal sizes of said plurality of openings are substantially equal to each other.
申请公布号 US6635952(B2) 申请公布日期 2003.10.21
申请号 US20020106371 申请日期 2002.03.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 INOH KAZUMI;KAWANAKA SHIGERU;MINAMI YOSHIHIRO;KATSUMATA YASUHIRO
分类号 H01L21/76;H01L21/02;H01L21/336;H01L21/762;H01L21/822;H01L21/8242;H01L21/8244;H01L23/544;H01L27/04;H01L27/10;H01L27/108;H01L27/11;H01L29/786;(IPC1-7):H01L29/06 主分类号 H01L21/76
代理机构 代理人
主权项
地址