发明名称 Method of substrate silicon removal for integrated circuit devices
摘要 An integrated circuit die coupled to a package substrate and having circuitry in a circuit side opposite a back side is etched in a manner that inhibits the erosion of underfill material that is used around the periphery of the die and between the die and the package substrate. According to an example embodiment of the present invention, a protective coating adapted to resist etch chemicals is formed over the underfill material. The die is then etched using an etch chemistry that, absent the protective coating, would erode the underfill material. In this manner, etch chemistries that would harm the die, or even be unusable can be used to etch the die. In addition, problems associated with the underfill being eroded, such as die chipping, can be avoided.
申请公布号 US6635572(B1) 申请公布日期 2003.10.21
申请号 US20010997715 申请日期 2001.11.28
申请人 ADVANCED MICRO DEVICES, INC. 发明人 GORUGANTHU RAMA R.;JOHNSON RICHARD W.;RING ROSALINDA M.
分类号 H01L21/56;H01L23/00;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/56
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