发明名称 |
Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same |
摘要 |
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
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申请公布号 |
US6635495(B2) |
申请公布日期 |
2003.10.21 |
申请号 |
US20010866881 |
申请日期 |
2001.05.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HOCHIKI CORPORATION;MURATA MANUFACTURING CO., LTD.;OKUYAMA MASANORI |
发明人 |
HASHIMOTO KAZUHIKO;MUKAIGAWA TOMONORI;KUBO RYUICHI;KISHIHARA HIROYUKI;NODA MINORU;OKUYAMA MASANORI |
分类号 |
G01J1/02;G01J5/34;G01J5/48;H01L21/306;H01L27/14;H01L37/02;H04N5/33;(IPC1-7):H01L21/00;H01L37/00 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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