发明名称 Method of measuring photoresist and bump misalignment
摘要 A method including the acts of providing a semiconductor device having a plurality of misalignment ruler markers formed therein for measuring removable layer opening misalignment in the X and Y directions, a bond pad and the passivation layer with an opening therein down to the bond pad. A removable layer is formed over the semiconductor device and includes an opening therein down to the bond pad. Preferably this action includes depositing, patterning and developing a dry photoresist film layer over the semiconductor device with an opening therein down to the bond pad. The next act includes measuring the misalignment of the opening in the passivation layer by counting the number of misalignment ruler markers visibly exposed by the opening in the X-direction and also the Y-direction.
申请公布号 US6636313(B2) 申请公布日期 2003.10.21
申请号 US20020045413 申请日期 2002.01.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD 发明人 CHEN YEN-MING;LIN CHIA-FU;CHING KAI-MING;SU CHAO-YUAN;LEE HSIN-HUI;CHEN LI-CHIH
分类号 G01B11/27;G03F7/20;(IPC1-7):G01B11/00;G01B11/26;H01L21/44;H01L23/48;B21D39/00 主分类号 G01B11/27
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