| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an engineering processing method for conducting engineering processing of a defect and electric conductivity in respective parts of a conductive nanoscale structure, having reliability and selectivity at a high speed to a wide area, and usable in combination with a defect and electric conductivity inspection method desirably automatically controllable further in a side view without substantially changing the other part of the conductive nanoscale structure by setting only an individual part of the conductive nanoscale structure as an object. <P>SOLUTION: This invention relates to a method for technologically processing the defect and the electric conductivity in the respective parts of the conductive nanoscale structure by generating a movement, melting, sputtering and/or evaporation by heating by turning a focused electron beam to the individual part of the conductive nanoscale structure to be technologically processed. The invention relates to use of a scanning electron microscope having a filter for detecting a backward scattered electron in this kind of method, and the scanning electron microscope having this kind of filter for detecting the backward scattered electron. <P>COPYRIGHT: (C)2004,JPO</p> |
