| 摘要 |
To improve performance, a capacitor is provided between storage nodes of an SRAM and a device having an analog capacitor on a single substrate, a plug is formed in a silicon oxide film on a pair of n channel type MISFETs in a memory cell forming area, and a local wiring LIc for connecting respective gate electrodes and drains of the pair of n channel type MISFETs is formed over the silicon oxide film and the plug. Thereafter, a capacitive insulating film and an upper electrode are formed over the local wiring LIc.
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