发明名称 |
Method for operation of an EEPROM array, including refresh thereof |
摘要 |
A method for operating an electrically erasable programmable read only memory (EEPROM) array, the method including refreshing a threshold voltage of a bit of a memory cell in an EEPROM array, the threshold voltage being different than a previous threshold voltage, by restoring the threshold voltage of the bit at least partially back to the previous threshold voltage.
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申请公布号 |
US6636440(B2) |
申请公布日期 |
2003.10.21 |
申请号 |
US20010841052 |
申请日期 |
2001.04.25 |
申请人 |
SAIFUN SEMICONDUCTORS LTD. |
发明人 |
MAAYAN EDUARDO;ELIYAHU RON;EISEN SHAI;EITAN BOAZ |
分类号 |
G11C16/02;G11C16/04;G11C16/34;(IPC1-7):G11C16/04;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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