Method of cleaning a dual damascene structure

摘要

A method of cleaning a dual damascene structure includes forming a first conductive layer in a substrate. A dielectric layer is formed over the substrate. A dual damascene opening is formed in the dielectric layer to expose the first conductive layer. A H2O2 based aqueous solution is used to remove polymer residues in the dual damascene opening. A temperature of the H2O2 based aqueous solution is controlled so that the first conductive layer is not corroded. A diluted HF solution or a diluted HF and HCl solution is used to remove the polymer residues. A second conductive layer is formed over the substrate to fill the dual damascene opening. A chemical mechanical polishing process is performed with the dielectric layer serving as a polishing stop to remove the second conductive layer outside the dual damascene opening. A H2O2 based aqueous solution is used to clean the hydrocarbon particulates from the chemical mechanically polishing step. A diluted HF solution or a diluted HF and HCl solution is used to remove the slurry residues, such as silicon oxide of the slurry, from the chemical mechanical polishing step.