发明名称 |
Method of making metallization and contact structures in an integrated circuit |
摘要 |
The invention concerns a method for forming metallization and contact structures in an integrated circuit. The method involoves the steps of etching a trench in the trench dielectric layer a trench dielectric layer of a composite structure containing a semiconductor substrate comprising an active region, a gate structure thereover, and dielectric spacers adjacent to the gate structure, a contact dielectric layer; and the trench dielectric layer; etching the contact dielectric layer under conditions which do not damage the gate structure to form a first contact opening that exposes a region of the semiconductor substrate; and depositing a conductive material into the contact opening and the trench.
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申请公布号 |
US6635566(B1) |
申请公布日期 |
2003.10.21 |
申请号 |
US20000593967 |
申请日期 |
2000.06.15 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
BLOSSE ALAIN;THEDKI SANJAY;QIAO JIANMIN;GILBOA YITZHAK |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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