| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR COMPONENT WITH INTERCONNECTIONS PARTIALLY MADE IN SUBSTRATE AND SEMICONDUCTOR COMPONENT MANUFACTURED BY THIS METHOD |
| 摘要 |
FIELD: manufacture of protected integrated circuits. SUBSTANCE: method for producing semiconductor component with its connections at least partially made in substrate includes making at least one connection inside semiconductor substrate and at least one connection on the latter. Semiconductor component manufactured by this method is capable of withstanding unwanted outside manipulations. EFFECT: enhanced reliability of protection against outside manipulations. 12 cl, 7 dwg |
| 申请公布号 |
RU2214649(C2) |
申请公布日期 |
2003.10.20 |
| 申请号 |
RU20010116128 |
申请日期 |
1999.11.11 |
| 申请人 |
INFINEON TEKNOLODZHIZ AG |
发明人 |
BRAUN KHEL'GA;KAKOSHKE RONAL'D;SHTOKAN REGINA;PLAZA GUNTER;KUKS ANDREAS |
| 分类号 |
H01L23/52;H01L21/285;H01L21/3205;H01L21/8238;H01L23/58;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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