发明名称 |
METHOD OF PRODUCTION OF TRICHLOROSILANE |
摘要 |
FIELD: methods of production of silicon chlorides; production of semiconductor silicon; chemistry. SUBSTANCE: proposed method includes bubbling of vapor-and-gas mixture obtained through hydrochlorination of silicon- containing raw material in still of rectifying column containing liquid chlorosilanes. Vapor-and-gas mixture escaping from column is cooled at two stages at temperature of from 22 to 32 C and from minus 5 to minus 10 C. Condensate of first and second stages is mixed at ratio of 1: (0.6- 5.9) and is returned to column in form of phlegm. Uncondensed vapor- and-gas mixture is directed for condensation for obtaining target product. EFFECT: reduced power requirements; enhanced purity of target product. 3 cl, 1 tbl, 1 ex |
申请公布号 |
RU2214364(C1) |
申请公布日期 |
2003.10.20 |
申请号 |
RU20020110941 |
申请日期 |
2002.04.24 |
申请人 |
OTKRYTOE AKTSIONERNOE OBSHCHESTVO "KHIMPROM" |
发明人 |
GASHENKO S.I.;TISHCHENKO I.A.;MAKSIMOVA G.V. |
分类号 |
C01B33/107 |
主分类号 |
C01B33/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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