发明名称 |
METHOD AND SYSTEM FOR PROVIDING A THIN FILM WITH A CONTROLLED CRYSTAL ORIENTATION USING PULSED LASER INDUCED MELTING AND NUCLEATION-INITIATED CRYSTALLIZATION |
摘要 |
<p>Method and system for generating a metal thin film with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradicated with a pulsed laser to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask which includes a first region capable of attenuating the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.</p> |
申请公布号 |
AU2003220611(A1) |
申请公布日期 |
2003.10.20 |
申请号 |
AU20030220611 |
申请日期 |
2003.04.01 |
申请人 |
THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK |
发明人 |
JAMES, S. IM;JAE, BEOM CHOI |
分类号 |
B21C;B23K26/00;C07C19/08;C09K19/34;H01L21/00;H01L21/31;H01L21/84;H05H1/24 |
主分类号 |
B21C |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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