发明名称 CHAMBER FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A chamber for manufacturing a semiconductor device is provided to be capable of minimizing the heat-shock supplied to a wafer and forming an improved thin film at the wafer by using a heating wire. CONSTITUTION: A chamber for manufacturing a semiconductor device is provided with a sealed reaction region(112) for loading a wafer(5) and an inlet pipe(114) installed at the upper portion of the chamber for supplying many kinds of gases from the outside to the reaction region. At this time, the chamber further includes a plurality of heating wires(152a) capable of generating heat, arrayed between the inlet pipe and the wafer. Preferably, each heating wire generates the heat of 1000-2000 °C. Preferably, the heating wire made of metal, is electrically connected to a power supply part.
申请公布号 KR20030080574(A) 申请公布日期 2003.10.17
申请号 KR20020019272 申请日期 2002.04.09
申请人 JU SUNG ENGNEERING CO., LTD. 发明人 KIM, BYEONG YEOP;HWANG, CHEOL JU
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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