| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce connection defect of a plug (connection part) formed between gate electrodes (on a source and a drain) of an MISFET for information transfer of a DRAM. <P>SOLUTION: A silicon nitride film 11, an SOG film 15a and a silicon oxide film 15b are deposited one by one on a gate electrode G and a silicon nitride film 8 of an MISFETQt for information transfer, and a resist film with an opening between the gate electrodes G is formed in an upper part thereof. When the silicon oxide film 15b and the SOG film 15a are etched by using the resist film R as a mask, anisotropic dry etching is carried out and thereafter isotropic dry etching is carried out for exposing the surface of the silicon nitride film 11. Thereafter, contact holes 16, 17 are formed by etching the silicon nitride film 11. Then, a plug 18 is formed by embedding a polycrystalline silicon film. As a result, a bottom area of the contact holes 16, 17 can be ensured and a contact area between the plug 18 and a substrate 1 can be ensured. <P>COPYRIGHT: (C)2004,JPO |
