| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a field effect transistor having a short gate length without being limited in terms of a device. <P>SOLUTION: The field effect transistor is provided with a source electrode and a drain electrode, which are separately formed on the surface of a semiconductor substrate, and a gate electrode which is brought into Schottky-contact with the semiconductor substrate on the semiconductor substrate between the electrodes. The method is provided with a process for forming the gate electrode of a metal film on an active layer on the surface of the semiconductor substrate, a process for etching the surface of the active layer so that a contact width between the gate electrode and a date length direction of the active layer becomes narrow by using the gate electrode as an etching mask and a process for making the solid-phase reaction of a lowermost metal in the gate electrode and the active layer remaining below the gate electrode by heat treatment and forming an alloy layer. <P>COPYRIGHT: (C)2004,JPO</p> |
