HEAT TREATMENT METHOD FOR SILICON WAFER, AND SILICON WAFER TREATED WITH THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a heat treatment method for a silicon wafer which does not have defects of a prior art, is performed economically, and further not only does not contain COPs only in an area close to its surface, but also does not contain COPs over the main portion of the thickness of the wafer, and further provides a silicon wafer obtained by the method. SOLUTION: The manufacturing method is performed such that a silicon wafer is exposed to an oxygen-containing atmosphere at least temporarily, and thereupon, heat treatment is performed at a temperature selected to satisfy an inequality expression (1) claimed in the claim 1. The silicon wafer has the density of the center of nucleus formation for separating oxygen of at least 107cm-3inside a bulk, and a zone which does not include the center of nucleus formation having at least 1μm on a wafer surface side, and further COPs density of lower than 10,000 cm-3down to a depth equivalent to at least 50% of the thickness of the wafer. COPYRIGHT: (C)2004,JPO