摘要 |
PROBLEM TO BE SOLVED: To provide a nitride based semiconductor laser element in which the lifetime can be prolonged. SOLUTION: The nitride based semiconductor laser element comprises an n-type clad layer 3, an emission layer 5 formed on the n-type clad layer 3, and a p-type clad layer 7 formed on the emission layer 5. The emission layer 5 comprises an MQW active layer emitting light, an n-type guide layer 54 and a p-type guide layer 56 for confining light, and an n-type carrier block layer 53 and a p-type carrier block layer 55 interposed between the active layer and the n-type guide layer 54 and the p-type guide layer 56, respectively, and having a band gap larger than that of the n-type guide layer 54 and the p-type guide layer 56, respectively. COPYRIGHT: (C)2004,JPO
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