| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving the limit of usage range, by suppressing the local concentration of electric current to a semiconductor cell formed in the periphery of a curved part of four corners of an active region or to a base region, when turning off. SOLUTION: In a semiconductor device, including an active region formed by curving at four corners thereof and a peripheral region formed in the circumferential part of the active region, a second groove which is in contact with both of one main surface of the semiconductor base and with the base region is formed in the region in the active region, where outer periphery thereof is curved. A second fixed-potential insulated electrode, insulated from a collector region by a second insulating film and made of a conductive material, is disposed in the inside of the second groove. COPYRIGHT: (C)2004,JPO
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