| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor that can suppress short channel effects and can be improved in driving force. SOLUTION: This field effect transistor is provided with a channel region 2 having a pair of facing channel surfaces, a pair of gate electrodes (3 and 4) respectively formed on the channel surfaces, and a source region 5 and a drain region 6 separately formed and positioned to hold the channel region 2 in between. The interval between the gate electrodes (3 and 4) on the source region 5 side is made longer than that between the electrodes (3 and 4) on the drain region 6 side. COPYRIGHT: (C)2004,JPO
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