| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having superior manufacturing yield. <P>SOLUTION: The semiconductor device is formed of a multilayer wiring substrate 100, which is provided for a plurality of leads 140 and connected electrically with a plurality of leads 140, a chip 110 provided at the upper surface 100a of the multilayer wiring substrate 100 and connected electrically with the multilayer wiring substrate 100, a chip 120 provided at the lower surface 100b of the multilayer wiring substrate 100 and connected electrically with the multilayer wiring substrate 100, and a resin 180 covering at least the multilayer wiring substrate 100, the chip 110 and the chip 120. <P>COPYRIGHT: (C)2004,JPO |
