| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device that is improved in reliability and is made free from defects by improving the dielectric breakdown voltage of the device and reducing the disconnection of wiring. SOLUTION: This semiconductor device is provided with a substrate having a surface composed of an insulating material and a recessed section 19 on its surface, a semiconductor film 13 having a source region 13b and a drain region 13c which are embedded in the recessed section and to which an impurity is added, and a gate insulating film 14 formed on the substrate and semiconductor film 13. This device is also provided with a gate electrode 15 formed at a prescribed position on the gate insulating film 14. COPYRIGHT: (C)2004,JPO
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