| 摘要 |
PROBLEM TO BE SOLVED: To reduce the fluctuation of heat treatment quantities of a plurality of wafers disposed at prescribed intervals in a heat treatment chamber, and to reduce the fluctuation of characteristics of semiconductor devices formed on the plurality of wafers. SOLUTION: The temperature of the lower part of a heat treatment chamber is increased by heaters 5 and 6 disposed at the insertion port side (heat treatment chamber lower side) of a heat treatment chamber, and the temperature of the upper part of the heat treatment chamber is increased by heaters 3 and 4 disposed at the heat treatment chamber deep side (heat treatment chamber upper side) after the time lag of a predetermined time. That is, a difference is set between the temperature increase start time of the heat treatment chamber by the heaters 5 and 6 disposed at the insertion port side and the temperature increase start time of the heat treatment chamber by the heaters 3 and 4 disposed at the heat treatment chamber deep side. COPYRIGHT: (C)2004,JPO
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