| 摘要 |
PROBLEM TO BE SOLVED: To restrain the deterioration of crystal quality of a group III nitride film which is caused by the oxidation and surface imperfection of a group III nitride base film, when the prescribed group III nitride film is formed on the epitaxial substrate provided with a base substance composed of a single crystal material and the group III nitride base film containing Al which is formed on the base substance. SOLUTION: The group III nitride base film 2 containing Al which is formed on the base substance 1 is dipped in a prescribed acid solution. By suitably controlling the pH and an oxidation-reduction potential, an oxide on the surface of the base film 2 is removed, and at the same time, a prescribed antioxidation film 3 is formed. An object group III nitride film is formed on the base film 2 after the antioxidation film 3 is removed by etching. COPYRIGHT: (C)2004,JPO
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