| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method applicable in a process for etching an organic material film with an inorganic material film serving as a mask, capable of maintaining a high etching rate according to a pattern to be etched with a superior result in shape and in in-plane uniformity, and which is free of inorganic material film exfoliation. SOLUTION: In a process for etching an organic material film formed on a workpiece by using etching gas plasma in a treatment vessel 1 with an inorganic material film serving as a mask, mixed gas containing NH<SB>3</SB>gas and O<SB>2</SB>gas is used as the etching gas when the areal ratio of the region opened by etching is 40% or larger in a etching pattern, and NH<SB>3</SB>gas is used as the etching gas when the areal ratio of the region opened by etching is smaller than 40% in the etching pattern. COPYRIGHT: (C)2004,JPO
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