发明名称
摘要 The invention concerns a device for generating a high negative voltage, as is needed in the programming of flash EEPROMs for instance. One advantage of the invention is that substrate control effects are reduced by virtue of the fact that the channel-forming wells of each of the transistors are connected to a terminal on one of the transistors, without the high negative voltage poling the substrate well diode in the forward direction and thus causing a short-circuit to the substrate.
申请公布号 KR100397078(B1) 申请公布日期 2003.10.17
申请号 KR19980705437 申请日期 1998.07.16
申请人 发明人
分类号 G11C16/06;G11C5/14;G11C11/4193;G11C16/30;H02M3/07 主分类号 G11C16/06
代理机构 代理人
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