| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic reluctance sensor for detecting a magnetic field by a spin valve effect, thereby enhancing detection sensitivity by increasing a change in resistance. SOLUTION: This fundamental structure comprises first and second magnetic thin film layers 3, 5 made of NiFe or the like which are formed across an antiferromagnetic thin film layer 4 made of FeMn or the like magnetized in one direction, first and second non-magnetic thin film layers 2, 6 made of Cu or the like contiguous to the magnetic thin film layers 3, 5, respectively, and third and fourth magnetic thin film layers 1, 7 made of NiFe or the like contiguous to the non-magnetic thin film layers 2, 6, respectively. The fundamental structures are laminated in a plurality of pairs on a substrate 8 to form a pair of terminals on an uppermost layer. COPYRIGHT: (C)2004,JPO
|
