| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric capacitor, in which the capacitor electrode surface can be exposed, without deterioration in planarization of the level different area of the ferroelectric capacitor, and to provide a memory device utilizing the same ferroelectric capacitor. SOLUTION: The method of manufacturing a ferroelectric capacitor comprises a process of forming the ferroelectric capacitor in which a ferroelectric layer 22 and a second electrode 24 are laminated, a process of forming a first insulation film consisting of a silicon nitride film, a process of patterning the first insulation film with the photolithography and etching processes, a process of simultaneously patterning, with the etching process, the first electrode, dielectric material film and second electrode using the patterned first insulation film as the mask, a process of forming a second insulation film 30 consisting of a silicon oxide film, a process of exposing thereafter the surface of the first insulation film, by etching the second insulation film on the first insulation film, a process of exposing the second electrode surface by removing the first insulation film, and a process of forming a third electrode 34. COPYRIGHT: (C)2004,JPO
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