| 摘要 |
PROBLEM TO BE SOLVED: To supply gas evenly to stacked substrates by unifying the flow volume and flow rate of gas supplied to the stacked substrates. SOLUTION: Inside a reaction tube 6, a buffer chamber 17 formed with buffer chamber holes 3 having an identical opening area is installed. Inside the buffer chamber 17, a gas nozzle 2 formed with gas nozzle holes 4, whose opening area becomes larger going from the upstream towards the downstream of the gas, is installed. The gas, blown out from the gas nozzle 2, is introduced into the buffer chamber 17 once, and after the flow rate of the gas is uniformized, the gas is supplied to wafers 7 through the buffer chamber holes 3. COPYRIGHT: (C)2004,JPO
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