METHOD FOR MANUFACTURING SLOPED FLOATING GATE OF NONVOLATILE MEMORY CELL

摘要

PURPOSE: A method for manufacturing a sloped floating gate of a nonvolatile memory cell is provided to be capable of simplifying manufacturing processes without forming a buffer oxide layer and a hard mask. CONSTITUTION: A tunnel oxide layer(102) is formed on a semiconductor substrate(100). A conductive layer is deposited on the tunnel oxide layer(102). The first mask pattern is formed to define the first and second plane corresponding to the width direction of a floating gate. A conductive pattern(104') having a slope plane(104a) is formed by patterning the conductive layer using the first mask pattern as a mask. After removing the first mask pattern, the second mask pattern is formed to define the third and fourth plane corresponding to the length direction of the floating gate. Then, the conductive pattern(104') is selectively etched by using the second mask pattern as a mask.