| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a p-type nitride compound semiconductor whose contact resistance against an electrode metal is low and which has a high carrier concentration. <P>SOLUTION: A 3-5 compound semiconductor in which a p-type dopant is doped and which is represented by a general formula In<SB>x</SB>Ga<SB>y</SB>Al<SB>z</SB>N (0≤x≤1, 0≤y≤1, 0≤z≤1 and x+y+z=1) is heat-treated in a mixed gas atmosphere comprising gas comprising oxygen and gas comprising hydrogen. Thus, the p-type nitride 3-5 compound semiconductor whose contact resistance against the electrode metal is low, which is superior in electric properties such an ohmic properties and which has a high carrier concentration can be manufactured. <P>COPYRIGHT: (C)2004,JPO |
