| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can shorten a bit line in a multiport SRAM memory cell and an associative storage, and has a low power consumption type SRAM memory cell whose margin to dispersion in manufacturing is improved. <P>SOLUTION: In the multiport SRAM memory cell, an access transistor N3 of a first port is disposed inside a p-type well PW0, and an access transistor N6 of a second port is disposed inside a p-type well PW1. The gates of all the transistors disposed inside a memory cell are extended in the same direction. <P>COPYRIGHT: (C)2004,JPO |
