发明名称 THIN-FILM TRANSISTOR ARRAY, MANUFACTURING METHOD THEREFOR AND LIQUID CRYSTAL DISPLAY USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a TFT array substrate where the deterioration of TFT characteristics due to light irradiation is suppressed, and to provide a manufacturing method of the substrate and a liquid crystal display which uses the method. <P>SOLUTION: The manufacturing method of the TFT array substrate has a process for forming a gate insulating film 3, a semiconductor layer 4a, an ohmic layer 4b and a metal film 16 on the substrate where gate wiring 1 is formed, a process for forming a resist pattern 17 on the metal film 16 by a photomechanical process so that a film thickness on an applied part of a semiconductor device layer 8 becomes thinner than that of the other part, a process for etching the metal film 16 and forming source wiring 6, a source electrode 5 and a drain electrode 7, a process for removing a resist on the applied part of the semiconductor active layer 8 and removing the ohmic layer 4b and the semiconductor layer 4a, a process for removing the metal film 16 and a process for removing the ohmic layer 4b. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003297850(A) 申请公布日期 2003.10.17
申请号 JP20020099990 申请日期 2002.04.02
申请人 ADVANCED DISPLAY INC 发明人 MORITA HIROMASA;NAKAJIMA TAKESHI
分类号 G02F1/1368;H01L21/28;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):H01L21/336;H01L21/321;G02F1/136 主分类号 G02F1/1368
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