| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a thin film uniformly on the treating surface of a semiconductor substrate by retaining the semiconductor substrate without causing any positional deviation. <P>SOLUTION: A substrate retaining member 13 for retaining the semiconductor substrate 2 is arranged in a sputtering chamber 11 over a target 12 and a tapered hole 132, whose opening area is reduced gradually from an upper end surface side opening 131, bigger than the size of the semiconductor substrate 2, toward a lower end surface side opening 134, smaller than the size of the semiconductor substrate 2, is formed on the substrate retaining member 13. When the semiconductor substrate 2 is inserted into the tapered hole 132 through the upper end surface side opening 131 while facing the treating surface 21 of the semiconductor substrate downward, the semiconductor substrate 2 is retained on the inner peripheral surface 133 of the tapered hole 132 on the substrate retaining member 13. Under this condition, particles are released from the target 12 by sputtering and the particles are adhered to the treating surface 21 of the semiconductor substrate 2 retained by the substrate retaining member 13 whereby the thin film is formed on the treating surface 21. <P>COPYRIGHT: (C)2004,JPO</p> |
