| 摘要 |
PROBLEM TO BE SOLVED: To provide an automatic pre-charge control circuit of a semiconductor memory device and a method for changing an automatic pre-charge start point. SOLUTION: This automatic pre-charge start point can be changed conforming to a frequency and/or latency information or conforming to a mode register setting MRS instruction, responding to at least one control signal. This automatic pre-charge control circuit comprises a control circuit receiving at least one control signal including a write signal, a clock signal, and at least one clock frequency information, and latency information and generating at least one path signal, an automatic pre-charge pulse signal driver receiving at least one path signal, a write signal, and an enable-signal and providing an automatic pre-charge pulse signal indicating a start point for automatic pre-charge operation, and an automatic pre-charge-mode enable circuit receiving a clock signal, an automatic pre-charge instruction, an active signal, and an automatic pre-charge pulse signal and generating an enable-signal. COPYRIGHT: (C)2004,JPO
|
