| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to form a thin silicide layer and a shallow junction and improve a junction margin for a hot-carrier by providing an active region with the sufficient amount of silicon. CONSTITUTION: An active region and an isolation region are defined by forming a field oxide layer(21) on a predetermined part of a silicon substrate(20). A gate oxide layer(22) is formed by performing a thermal oxidation process for a surface of the semiconductor substrate(20). A gate(23) is defined by depositing and patterning a polysilicon thereon. A low density doped region(24) is formed by implanting N type dopants into the semiconductor substrate(20). A sidewall spacer(25) is formed on a side face of the gate(23). A high density doped region(26) is formed by implanting N type dopants into the semiconductor substrate(20). A low density dopant diffused region(24) and a high density dopant diffused region(26) are formed by performing a predetermined thermal process. A plurality of self-aligned silicide layers(270,271) are formed on a gate(23) and the high density dopant diffused region(26).
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