发明名称 OPTICAL SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To effectively prevent a laminated body of an optical semiconductor device from being spoiled by components of a protection film, thus improving a COD. SOLUTION: The optical semiconductor device has the laminated body constituting the optical semiconductor device, an intermediate film provided on an optical entrance or exit plane of the laminated body, and the protection film provided by an ion assist evaporation on the intermediate film. The optical semiconductor device is characterized in that a larger amount of ions irradiation is applied on the protection film than on the intermediate film. Since the intermediate film is formed by the relatively low amount of ions irradiation, it is possible to restrict a state that the optical entrance or exit plane is spoiled by an ions collision. Further, a method for manufacturing the device has a first step of forming the intermediate film on the optical entrance or exit plane of the laminated body constituting the optical semiconductor device at a first growing rate by use of an ion assist evaporating method, and a second step of forming the protection film on the intermediate film at a lower growing rate than the first growing rate by use of the ion assist evaporating method. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003298165(A) 申请公布日期 2003.10.17
申请号 JP20020098035 申请日期 2002.03.29
申请人 FUJITSU QUANTUM DEVICES LTD 发明人 OSAKA SHIGEO
分类号 H01L21/318;H01L33/44;H01S5/02;H01S5/028;(IPC1-7):H01S5/02 主分类号 H01L21/318
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