| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an extremely high speed NPN heterojunction bipolar transistor and an extremely high speed PNP heterojunction bipolar transistor having a capacity equal to the NPN transistor are formed on a common wafer, and to provide a manufacture method of the device. SOLUTION: The NPN transistor having an epitaxial region in an N-type silicon/P-type silicon germanium/N-type silicon structure and the PNP transistor having an epitaxial region in a P-type silicon/N-type silicon germanium/P-type silicon structure are formed in the silicon wafer after an element separation oxidized film is formed. In the profile of the concentration distribution of germanium within bases of the NPN transistor and the PNP transistor, a collector side has a peak and a value reduces toward an emitter side. Since epitaxial layers independently grow, the speed potential of the transistors can be adjusted to an ultimate level by practical withstand pressure. COPYRIGHT: (C)2004,JPO
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