发明名称 COMPOSITE SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element exhibiting a high open voltage (Voc) and a high functional factor (F.F.) and a photochemical cell employing it. <P>SOLUTION: Surface of a crystalline n-type semiconductor is coated with at least any one kind of metal carbonate, metal oxide and metal titanate to produce a composite semiconductor and a film of semiconductor containing the composite semiconductor is formed on a conductive support, thus producing the photoelectric conversion element. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003298082(A) 申请公布日期 2003.10.17
申请号 JP20020092815 申请日期 2002.03.28
申请人 ASAHI KASEI CORP 发明人 OKADA NOBUHIRO;KURIHARA MASAAKI
分类号 H01L31/04;H01M14/00 主分类号 H01L31/04
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