| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor whit a high speed, high a breakdown voltage and a high current amplification factor, and to provide a manufacturing method of the transistor. SOLUTION: InGaP which is not systematized is used for an emitter and systematized InGaP is used for a collector. Thus, a heterojunction of a I-type is formed between the emitter and a base and a heterojunction of a II-type between the base and the collector. Thus, an energy barrier on an interface is eliminated, or the base can be made into a double layer structure. Consequently, electrons are injected into the collector C without being blocked by a potential barrierΔEc. Influences of Auger recombination and alloy diffusion are suppressed and the high current amplification factor can be obtained by hot electron effects of the electrons injected from the emitter. COPYRIGHT: (C)2004,JPO
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