| 摘要 |
PROBLEM TO BE SOLVED: To measure a period of a signal to be measured from the internal signal generation circuit section of a memory device without using a waveform measuring instrument. SOLUTION: A memory device provided with an internal signal generation circuit section 22 outputting an internal signal which is non-synchronous with an external signal and has a fixed period is provided with an entry circuit section 23 generating an output by discriminating that a memory device satisfies conditions to performs a test when entry information is inputted, an AND circuit 26 generating an output in a state in which the output of the entry circuit section 23 is generated and the memory cell array section 16 of the memory device is permitted to be written, and a buffer 28 for the internal signal coupling the internal signal to the data write input of the memory cell array section 16 when activation is performed by the output of the AND circuit 26. COPYRIGHT: (C)2004,JPO
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