| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device which uses a laser crystallizing method capable of preventing a grain boundary from being formed in a channel forming region of a TFT, preventing the mobility of a TFT from being markedly decreased by the grain boundary, and preventing a decrease in on-current and an increase in off-current, and to provide a semiconductor device formed by using the forming method. SOLUTION: A stripe or rectangular uneven part is formed. A semiconductor film formed on an insulating film is irradiated with laser light of continuous oscillation along the unevenness of the stripe of the insulating film or along the direction of the long axis or the short axis of a rectangle. In this case, although it is most desirable to use the laser light of continuous oscillation, laser light of pulse oscillation may also be used. COPYRIGHT: (C)2004,JPO
|
