| 摘要 |
PROBLEM TO BE SOLVED: To improve the light resistance of a thin film transistor (TFT) using CG silicon films and to reduce off-current. SOLUTION: Each of the channel layer 19a, source layer 19b, and drain layer 19c of the TFT formed on a quartz substrate 11 having an insulating surface is formed by laminating a p-type Si film 12 which is a first crystalline silicon film and a CG silicon film 13 which is a second crystalline silicon film upon another in this order. The thickness of the CG silicon film 13 is made thinner than that of the p-type Si film 12. COPYRIGHT: (C)2004,JPO
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