| 摘要 |
The matrix is designed to be made hybrid with a reading circuit and is formed on the basis of a wafer of semiconductor material presenting one face to receiving light to detect, and the opposite face to combine with the reading circuit. The wafer is divided in pixels, and each pixel constitutes a photodetector (12). The pixels are separated one from another by walls (13) each sandwiched between two insulating partitions (14,15) formed in transverse direction in the wafer, and the opposite face presents the connection pads (18) allowing the matrix to be made hybrid with the reading circuit. Each photodetector (12) comprises a zone of first doping type (16) in electrical contact with the corresponding connection pad (18), and also a zone of second doping type (17) complementary to the first doping type and in electrical contact with an electrode (19) common to all photodetectors and supported by the hybrid face. The walls are electrically insulating with respect to photodetectors. The common electrode is supported by the hybrid face of the matrix of photodetectors. The second doping type zone is extended in full thickness of the wafer of semiconductor material. Each photodetector comprises at least one layer of wafer adjacent to the face receiving light, and of second doping type. The walls have a top which does not attain the receiving face, and the second doping type zone is situated between the top and the receiving face. The common electrode is supported by the receiving face, and means for electrical connection traverse the wafer for linking the common electrode to a conducting pad on the hybrid face. The first type doping zones are localized between the tops of the walls and the receiving face, and the second doping type zones correspond to walls having a top attaining the receiving face. The receiving face supports at least one optical element, which is an antireflection layer, a color filter, and a system for light concentration. |
